Electron mobility calculation for graphene on substrates

AlGaN/GaN High-Electron-Mobility Transistors on Different Substrates

The performance ofaluminum gallium nitride/gallium nitride (AlGaN/GaN) high-electron-mobility transistors (HEMTS) diamond and silicon carbide (SiC) substrates is examined. Additionally, the temperature rise in similar devices on diamond and SiC substrates is reported. Recently, identical AlGaN/GaN HEMTs have been fabricated at Cornell NanoScale Science & Technology Facility (CNF) on diamond, bu...

High-Electron Mobility Graphene Channel Transistors for Millimeter-Wave Applications

We have fabricated and characterized the graphenechannel field effect transistors (GFETs) on semi-insulating SiC substrates. In our first GFETs, the device exhibits n-type FET operation with the transconductance of 0.1 mS/mm at the drain voltage of 0.5 V. The current gain cutoff frequency characterized by S parameter measurement is 0.5 GHz. These characteristics are primarily limited by the low...

DFT Calculation for Adatom Adsorption on Graphene

Molecular mobility on graphene nanoroads

We study molecular mobility on a graphene nanoroad (GNRD), a pristine graphene strip embedded in between two hydrogenated graphene domains serving as a nanoscale pathway for transporting admolecules. Our molecular dynamics simulations using a prototype physisorbed C60 admolecule demonstrate that the proposed GNRD is able to confine the diffusive motion of the admolecule within the nanoroad up t...

Upright standing graphene formation on substrates.

We propose integrating graphene nanoribbons (GNRs) onto a substrate in an upright position whereby they are chemically bound to the substrate at the basal edge. Extensive ab initio calculations show that both nickel (Ni)- and diamond-supported upright GNRs are feasible for synthesis and are mechanically robust. Moreover, the substrate-supported GNRs display electronic and magnetic properties ne...